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Proceedings Paper

X-band "peeled" HEMT amplifier
Author(s): Paul G. Young; Robert R. Romanofsky; Samuel A. Alterovitz; Edwyn D. Smith
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Paper Abstract

A discrete peeled high electron mobility transistor (HEMT) device was integrated into a 10 GHz amplifier. The discrete HEMT device interconnects were made using photo patterned metal, stepping from the 10 mil alumina host substrate onto the 1.3 micrometers thick peeled GaAs HEMT layer, eliminating the need for bond wires and creating a fully integrated circuit. Testing of device indicate that the peeled device is not degraded by the peel off step but rather there is an improvement in the quantum well carrier confinement. Circuit testing resulted in a maximum gain of 8.5 dB and a return loss minimum of -12 dB.

Paper Details

Date Published: 3 September 1992
PDF: 7 pages
Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137719
Show Author Affiliations
Paul G. Young, Univ. of Toledo (United States)
Robert R. Romanofsky, NASA Lewis Research Ctr. (United States)
Samuel A. Alterovitz, NASA Lewis Research Ctr. (United States)
Edwyn D. Smith, Univ. of Toledo (United States)


Published in SPIE Proceedings Vol. 1680:
High-Speed Electronics and Optoelectronics

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