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Proceedings Paper

Advanced-power and low-noise HEMT devices and MMICs
Author(s): P. C. Chao; P. M. Smith; J. M. Ballingall
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Paper Abstract

Advanced high electron mobility transistors (HEMTs) and MMICs, currently under development at GE for a variety of power and low noise applications at frequencies ranging from 1 to 100 GHz, is reviewed, and future trends are projected.

Paper Details

Date Published: 3 September 1992
PDF: 8 pages
Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137717
Show Author Affiliations
P. C. Chao, GE Electronics Lab. (United States)
P. M. Smith, GE Electronics Lab. (United States)
J. M. Ballingall, GE Electronics Lab. (United States)

Published in SPIE Proceedings Vol. 1680:
High-Speed Electronics and Optoelectronics
John Edward Bowers; Umesh K. Mishra, Editor(s)

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