Share Email Print
cover

Proceedings Paper

Exploratory antimony containing heterojunction bipolar transistors
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The advantages of using Sb containing III-V compounds in bipolar type devices are discussed with recent experimental results of two different applications of GaAsSb in Heterojunction Bipolar Transistors (HBTs). The performance of a prototype AlGaAs/GaAsSb/GaAs double HBT (DHBT) that exhibits a current gain of five and a maximum collector current density of 5 X 104 A/cm2 and a pnp AlGaAs/GaAs HBT with a superlattice GaAsSb emitter ohmic contact, with specific contact resistivity of 5 +/- 1 X 10-7 (Omega) -cm2 across the sample, are examined.

Paper Details

Date Published: 3 September 1992
PDF: 12 pages
Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137716
Show Author Affiliations
Kiki Ikossi-Anastasiou, Louisiana State Univ. (United States)


Published in SPIE Proceedings Vol. 1680:
High-Speed Electronics and Optoelectronics

© SPIE. Terms of Use
Back to Top