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Exploratory antimony containing heterojunction bipolar transistors
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Paper Abstract

The advantages of using Sb containing III-V compounds in bipolar type devices are discussed with recent experimental results of two different applications of GaAsSb in Heterojunction Bipolar Transistors (HBTs). The performance of a prototype AlGaAs/GaAsSb/GaAs double HBT (DHBT) that exhibits a current gain of five and a maximum collector current density of 5 X 104 A/cm2 and a pnp AlGaAs/GaAs HBT with a superlattice GaAsSb emitter ohmic contact, with specific contact resistivity of 5 +/- 1 X 10-7 (Omega) -cm2 across the sample, are examined.

Paper Details

Date Published: 3 September 1992
PDF: 12 pages
Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137716
Show Author Affiliations
Kiki Ikossi-Anastasiou, Louisiana State Univ. (United States)

Published in SPIE Proceedings Vol. 1680:
High-Speed Electronics and Optoelectronics

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