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Proceedings Paper

Low-temperature characterization of high-current-gain AlGaAs/GaAs narrow-base heterojunction bipolar transistor
Author(s): Kiki Ikossi-Anastasiou; Andris Ezis; Keith Evans; Charles Ed Stutz
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Paper Abstract

AlGaAs/GaAs Narrow Base Heterojunction Bipolar Transistors (NBHBTs) with 50 angstroms thick bases exhibit maximum small signal common emitter current gains hfe of 1400 at 300 K and 3000 at 80 K. The performance of the device is attributed to the superlattice graded emitter contact and a novel planar base access fabrication process. Low temperature measurements indicate that the maximum current gain increases exponentially with decreasing temperature until is saturates around 200 K, suggesting a tunnelling limited current transport mechanism.

Paper Details

Date Published: 3 September 1992
PDF: 8 pages
Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137715
Show Author Affiliations
Kiki Ikossi-Anastasiou, Louisiana State Univ. (United States)
Andris Ezis, Universal Energy Systems (United States)
Keith Evans, Air Force Wright Lab. (United States)
Charles Ed Stutz, Air Force Wright Lab. (United States)


Published in SPIE Proceedings Vol. 1680:
High-Speed Electronics and Optoelectronics

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