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Proceedings Paper

Optoelectronic applications of heterojunction bipolar transistor technology: promises and problems
Author(s): Leda M. Lunardi; Chandra S. Chandrasekhar
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Paper Abstract

This is a review of general characteristics of Heterojunction Bipolar Transistors (HBTs) and the status of Optoelectronic Integrated Circuits (OEICs) with HBT-based electronics. We also analyze different approaches taken at the present for the monolithic integration.

Paper Details

Date Published: 3 September 1992
PDF: 6 pages
Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137714
Show Author Affiliations
Leda M. Lunardi, AT&T Bell Labs. (United States)
Chandra S. Chandrasekhar, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1680:
High-Speed Electronics and Optoelectronics

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