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Proceedings Paper

16-GHz GaAs/AlGaAs multiple-quantum-well laser with vertically compact waveguide structure
Author(s): John D. Ralston; Ignacio Esquivias; S. Weisser; Dominic F. G. Gallagher; Paul J. Tasker; Eric C. Larkins; Josef Rosenzweig; Hans P. Zappe; Joachim Fleissner; Donat Josef As
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Paper Abstract

A GaAs/AlxGa1-xAs multiple quantum well laser with a 3 dB electrical modulation bandwidth of 16 GHz has been developed. Optimized design of the waveguide, including implementation of high average Al mole fraction (xeff equals 0.8) GaAs/AlAs binary short-period superlattice cladding layers, together with a coplanar electrode geometry, has resulted in a vertically compact laser structure suitable for integration.

Paper Details

Date Published: 3 September 1992
PDF: 10 pages
Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137711
Show Author Affiliations
John D. Ralston, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Ignacio Esquivias, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
S. Weisser, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Dominic F. G. Gallagher, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Paul J. Tasker, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Eric C. Larkins, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Josef Rosenzweig, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Hans P. Zappe, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Joachim Fleissner, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Donat Josef As, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)


Published in SPIE Proceedings Vol. 1680:
High-Speed Electronics and Optoelectronics

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