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Proceedings Paper

High-performance AlGaAs/GaAs HBT IC technology
Author(s): S. Jayasimha Prasad; B. Vetanen; C. Haynes; S. Park; I. Beers; Scott Diamond; G. A. Pubanz; John T. Ebner; S. Sanielevici; Agoston Agoston
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Paper Abstract

A high-performance AlGaAs/GaAs HBTIC technology capable of 45 GHz fT and fmax is described. The process is mesa isolated and does not use any ion-implantation steps. This simple non-self-aligned process integrates 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. An HBT divide-by-eight prescaler circuit clocks at 13.5 GHz. A pulser circuit using the fast Schottky diodes produced a voltage pulse having 10.35 ps rise time.

Paper Details

Date Published: 3 September 1992
PDF: 15 pages
Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137709
Show Author Affiliations
S. Jayasimha Prasad, Tektronix, Inc. (United States)
B. Vetanen, Tektronix, Inc. (United States)
C. Haynes, Tektronix, Inc. (United States)
S. Park, Tektronix, Inc. (United States)
I. Beers, Tektronix, Inc. (United States)
Scott Diamond, Tektronix, Inc. (United States)
G. A. Pubanz, Tektronix, Inc. (United States)
John T. Ebner, Tektronix, Inc. (United States)
S. Sanielevici, Tektronix, Inc. (United States)
Agoston Agoston, Tektronix, Inc. (United States)

Published in SPIE Proceedings Vol. 1680:
High-Speed Electronics and Optoelectronics
John Edward Bowers; Umesh K. Mishra, Editor(s)

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