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Proceedings Paper

Effects of carrier transport on relative intensity noise and modulation response in quantum-well lasers
Author(s): Radhakrishnan Nagarajan; Masayuki Ishikawa; John Edward Bowers
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Paper Abstract

The maximum possible intrinsic modulation in semiconductor lasers is conventionally written in terms of the K factor. Although this is often sufficient in bulk lasers, it is usually not true in quantum well lasers where carrier transport can significantly affect the high speed properties. Here we present analytical expressions, which include the effects of carrier transport, for the modulation response and the relative intensity noise in quantum well lasers. We show that in the presence of significant transport effects, the K factor is not an accurate measure of the maximum possible intrinsic modulation bandwidth.

Paper Details

Date Published: 3 September 1992
PDF: 5 pages
Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137703
Show Author Affiliations
Radhakrishnan Nagarajan, Univ. of California/Santa Barbara (United States)
Masayuki Ishikawa, Univ. of California/Santa Barbara (United States)
John Edward Bowers, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 1680:
High-Speed Electronics and Optoelectronics
John Edward Bowers; Umesh K. Mishra, Editor(s)

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