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Proceedings Paper

Ensemble Monte Carlo simulation of femtosecond photoexcitation in AlGaAs
Author(s): Selim E. Guencer; David K. Ferry
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Paper Abstract

Femtosecond photoexcitation experiments have been used by many groups to investigate ultrafast scattering processes in semiconductors. Information on intervalley scattering rates can readily be deduced by monitoring valley populations in real time, and particularly, a number of groups have made measurements for (Gamma) -L and (Gamma) -X intervalley scattering in GaAs. However, due to the direct gap, the L-X scattering in GaAs can not be directly monitored. Recently, experiments to monitor the X valley population in indirect AlGaAs have been performed, and utilized to set up an upper bound for the L-X scattering lifetime. We have used an ensemble Monte Carlo (EMC) technique to calculate the evolution of valley populations in indirect AlGaAs illuminated by a femtosecond pulse laser. The time evolution of electron populations in the (Gamma) , L and X valleys is studied by varying the intervalley coupling constants. The L-X intervalley deformation potential is found to be DXL equals 1.5 +/- 0.5 X 108 eV/cm.

Paper Details

Date Published: 21 October 1992
PDF: 7 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137697
Show Author Affiliations
Selim E. Guencer, Arizona State Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)

Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors
Robert R. Alfano, Editor(s)

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