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Proceedings Paper

Femtosecond dynamics of hot carriers in GaAs
Author(s): Philippe M. Fauchet; Ting Gong
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Paper Abstract

The pump-probe technique is used to perform a series of measurements on intrinsic GaAs samples at room temperature with a temporal resolution of 75 - 100 fs. Changes of both absorption coefficient and refractive index are measured over a wide spectral region (550 - 950 nm) for various carrier densities (<1016 to 1019 cm-3) injected at 2 eV. These measurements provide insight on the fundamental properties of nonequilibrium carriers, including electron-electron scattering, electron-hole scattering, electron-phonon scattering, hole-phonon scattering, band-gap renormalization, plasma screening of Coulomb interactions, and free-carrier absorption.

Paper Details

Date Published: 21 October 1992
PDF: 10 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137694
Show Author Affiliations
Philippe M. Fauchet, Univ. of Rochester (United States)
Ting Gong, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors

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