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Proceedings Paper

Electron energy relaxation dynamics in GaAs quantum wells grown on Si: cool-hole effect
Author(s): Kai Shum; Yoshihiro Takiguchi; Jihad M. Mohaidat; Robert R. Alfano; Hao Qiang; Fred H. Pollak; Hadis Morkoc
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Paper Abstract

Cool hole effect on hot electron energy relaxation dynamics in GaAs quantum wells grown on Si was investigated using photoreflectance and time-resolved photoluminescence spectroscopies. It was demonstrated that for the quantum wells in which there is a two- dimensional light (heavy) mass hole gas the electron energy relaxation is dominated by electron-hole (electron-longitudinal optical phonon) energy exchange.

Paper Details

Date Published: 21 October 1992
PDF: 11 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137689
Show Author Affiliations
Kai Shum, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Yoshihiro Takiguchi, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Jihad M. Mohaidat, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Robert R. Alfano, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Hao Qiang, CUNY/Brooklyn College (United States)
Fred H. Pollak, CUNY/Brooklyn College (United States)
Hadis Morkoc, Univ. of Illinois/Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors
Robert R. Alfano, Editor(s)

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