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Spin relaxation dynamics of excitons and free carriers in quasi-two-dimensional GaAlAs/GaAs structures
Author(s): Theodore C. Damen; Luis Vina; Karl Leo; John E. Cunningham; Jagdeep Shah; Lu Jeu Sham
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Paper Abstract

We present the results of a comprehensive investigation of spin-relaxation processes of electrons, holes and excitons in quantum wells using subpicosecond spectroscopy of luminescence polarization. Spin relaxation rates of electrons and holes are measured directly in modulation-doped quantum wells and give a good understanding of spin-relaxation processes of electrons and holes. We show that spin-relaxation dynamics of excitons, on the other hand, is quite complicated and is strongly influenced by their formation dynamics, many-body effects and localization dynamics. Although we have made good progress towards understanding exciton spin relaxation processes, some other outstanding issues will require further attention. We compare our results to those in bulk GaAs, and those in quantum wells obtained by other techniques.

Paper Details

Date Published: 21 October 1992
PDF: 12 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137686
Show Author Affiliations
Theodore C. Damen, AT&T Bell Labs. (United States)
Luis Vina, AT&T Bell Labs. (United States)
Karl Leo, AT&T Bell Labs. (United States)
John E. Cunningham, AT&T Bell Labs. (United States)
Jagdeep Shah, AT&T Bell Labs. (United States)
Lu Jeu Sham, Univ. of California/San Diego (United States)

Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors

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