Share Email Print
cover

Proceedings Paper

Exciton dynamics in 121A GaAs and GaAsP QWs having different valence band structures arising from built-in biaxial stress
Author(s): Yoshihiro Takiguchi; Kai Shum; Robert R. Alfano; Emil S. Koteles; Dan C. Bertolet; Kei May Lau
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Exciton dynamics in various 121 angstroms single quantum wells (QWs): a AlGaAs/GaAs QW and two AlGaAs/GaAsP QWs, under different built-in biaxial tension, has been investigated using time resolved photoluminescence (PL) spectroscopy at 5 K. Heavy-hole (hh) and light-hole (lh) exciton formation times from free electron-hole pair, hh (lh) exciton to lh (hh) exciton inter-subband relaxation times, exciton localization times to interface islands, and localized exciton annihilation decay times in the strained and non-strained QWs have been determined by fitting the PL time profiles at the lowest emission energy with an analytical solution for the localized exciton population profile obtained by solving six level rate equations.

Paper Details

Date Published: 21 October 1992
PDF: 8 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137685
Show Author Affiliations
Yoshihiro Takiguchi, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Kai Shum, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Robert R. Alfano, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Emil S. Koteles, GTE Labs. Inc. (United States)
Dan C. Bertolet, University of Washington (United States)
Kei May Lau, Univ. of Massachusetts/Amherst (United States)


Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors

© SPIE. Terms of Use
Back to Top