Share Email Print

Proceedings Paper

Hot photoexcited electrons and exciton kinetics in GaAs
Author(s): Jaak Aaviksoo; I. Reimand; Victor V. Rossin; V. V. Travnikov
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Exciton-polariton photoluminescence kinetics under short-pulse excitation in pure epitaxial GaAs has been investigated. The observed delayed onset of the polariton luminescence is attributed to the energy relaxation of polaritons and photoexcited electrons. The electron energy relaxation is controlled by inelastic impurity scattering. In an ultrapure sample (ND approximately 1012 cm-3) the maximum of luminescence is reached after a considerable delay of 4 ns. At high repetition rate the next excitation pulse causes a fast quenching of polariton luminescence in the vicinity of exciton resonance due to heating of excitons by photoexcited hot electrons. A model of exciton luminescence kinetics involving exciton-electron interaction has been proposed.

Paper Details

Date Published: 21 October 1992
PDF: 12 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137683
Show Author Affiliations
Jaak Aaviksoo, Institute of Physics (Estonia)
I. Reimand, Institute of Physics (Estonia)
Victor V. Rossin, A.F. Ioffe Physical-Technical Institute (Russia)
V. V. Travnikov, A.F. Ioffe Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors
Robert R. Alfano, Editor(s)

© SPIE. Terms of Use
Back to Top