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Ultrafast thermal nonlinearities in amorphous silicon| Format | Member Price | Non-Member Price |
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Paper Abstract
We report the observation in a-Si:H of a large thermal nonlinearity with a picosecond response time. The spectral dependence of the refractive and absorptive parts of this unusually fast thermal nonlinearity reveals that it arises from a picosecond nonradiative recombination of electrons and holes across the band gap. The optical and electronic processes that make this thermal nonlinearity possible and observable are discussed.
Paper Details
Date Published: 21 October 1992
PDF: 10 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137681
Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors
Robert R. Alfano, Editor(s)
PDF: 10 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137681
Show Author Affiliations
Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors
Robert R. Alfano, Editor(s)
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