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Proceedings Paper

Ultrafast thermal nonlinearities in amorphous silicon
Author(s): Philippe M. Fauchet; Daniele Hulin; A. Mourchid; Regis Vanderhaghen
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Paper Abstract

We report the observation in a-Si:H of a large thermal nonlinearity with a picosecond response time. The spectral dependence of the refractive and absorptive parts of this unusually fast thermal nonlinearity reveals that it arises from a picosecond nonradiative recombination of electrons and holes across the band gap. The optical and electronic processes that make this thermal nonlinearity possible and observable are discussed.

Paper Details

Date Published: 21 October 1992
PDF: 10 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137681
Show Author Affiliations
Philippe M. Fauchet, Univ. of Rochester (United States)
Daniele Hulin, ENSTA (France)
A. Mourchid, ENSTA and Ecole Polytechnique (France)
Regis Vanderhaghen, Ecole Polytechnique (France)


Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors

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