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Proceedings Paper

Ultrafast recombination in H+-bombarded InP and GaAs: consequences for the carrier distribution functions
Author(s): Karl Franz Lamprecht; Simon Juen; Leopold Palmetshofer; Ralph A. Hoepfel
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Paper Abstract

We studied the lifetimes and the luminescence spectra of photoexcited carriers in H+ bombarded InP and GaAs for different damage doses by means of femtosecond luminescence spectroscopy. For InP the lifetime decreases down to 95 fs for the highest dose, whereas for GaAs no shorter lifetime than 650 fs could be observed. With decreasing lifetime we observe an increase of the high energy tail of the time-integrated luminescence spectrum which is even inverted for the 95 fs InP sample.

Paper Details

Date Published: 21 October 1992
PDF: 6 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137679
Show Author Affiliations
Karl Franz Lamprecht, Univ. of Innsbruck (Austria)
Simon Juen, Univ. of Innsbruck (Austria)
Leopold Palmetshofer, Univ. of Linz (Austria)
Ralph A. Hoepfel, Univ. of Innsbruck (Austria)


Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors

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