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Proceedings Paper

Femtosecond electron relaxation in InGaAs lattice matched to InP
Author(s): David Cohen; Clifford R. Pollock
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Paper Abstract

Carrier energy relaxation times have been measured in In0.53Ga0.47As grown by MBE on InP. Layer thicknesses from 0.5 to 3 microns have been studied. An NaCl color center laser using additive pulse modelocking supplied 150 femtosecond pulses with photon energies between 780 and 806 meV. These were used for time resolved optical saturation measurements near the 750 meV material bandgap. Carrier densities between 0.4 X 1018 and 5.7 X 1018 were achieved. Lifetimes of about 150 femtoseconds are reported. These are observed to decrease with increasing carrier density and with decreasing photon energy.

Paper Details

Date Published: 21 October 1992
PDF: 6 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137677
Show Author Affiliations
David Cohen, Cornell Univ. (United States)
Clifford R. Pollock, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors

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