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Proceedings Paper

Effect of Al mole fraction on decay profile of photoinduced IR absorption and the determination of the critical value of xc for AlxGa1-xAs
Author(s): Wubao B. Wang; Robert R. Alfano; David M. Szmyd; Arthur J. Nozik
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Paper Abstract

The hot carrier dynamics in the satellite X valley in AlxGa1-xAs was measured by femtosecond pump-probe infrared absorption spectroscopy. The dynamics of the X valley electrons for samples with x = 0.439. The critical value of xc corresponding to the direct-to-indirect band gap transition for AlxGa1-xAs was determined to be 0.412 +/- 0.006.

Paper Details

Date Published: 21 October 1992
PDF: 6 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137671
Show Author Affiliations
Wubao B. Wang, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Robert R. Alfano, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
David M. Szmyd, Solar Energy Research Institute (United States)
Arthur J. Nozik, Solar Energy Research Institute (United States)


Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors

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