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Proceedings Paper

Processing of InP and related compounds at nanometer dimensions
Author(s): Ilesanmi Adesida; Hung-Pin Chang; Donald J. Ballegeer; X. Liu; Stephen G. Bishop; Catherine Caneau; Rajaram J. Bhat
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Paper Abstract

Processes for the fabrication of nanometer-scale geometries in InP and related materials are discussed. Special emphasis is directed to pattern transfer using reactive ion etching in methane-hydrogen plasmas. Using these processes, 70 nm period gratings etched 900 nm deep in InP resulting in an aspect ratio of 25 is demonstrated. It is shown that these processes can be applied successfully to the fabrication of quantum wires in InP/InGaAs heterostructures. The high luminescence efficiency of these wires even at dimensions down to 40 nm shows that CH4/H2 reactive ion etching does not severely degrade the optical properties of quantum wires.

Paper Details

Date Published: 2 September 1992
PDF: 10 pages
Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137663
Show Author Affiliations
Ilesanmi Adesida, Univ. of Illinois/Urbana-Champaign (United States)
Hung-Pin Chang, Univ. of Illinois/Urbana-Champaign (United States)
Donald J. Ballegeer, Univ. of Illinois/Urbana-Champaign (United States)
X. Liu, Univ. of Illinois/Urbana-Champaign (United States)
Stephen G. Bishop, Univ. of Illinois/Urbana-Champaign (United States)
Catherine Caneau, Bell Communications Research (United States)
Rajaram J. Bhat, Bell Communications Research (United States)

Published in SPIE Proceedings Vol. 1676:
Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
Roger J. Malik; Chris J. Palmstrom; Salah M. Bedair; Harold G. Craighead; Randall L. Kubena, Editor(s)

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