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Proceedings Paper

Dry-etching process for the fabrication of optoelectronic gratings in III-V substrates
Author(s): Antoni S. Gozdz; John A. Shelburne; Chuan C. Chang; R. S. Robinson
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Paper Abstract

We report a novel, three-step dry etching process for the fabrication of first-order diffraction gratings in III - V semiconductors. The process takes advantage of the etching of thin films of SiO2 and an organosilicon electron-beam resist (poly(3-butenyltrimethylsilane sulfone)) by the H2/CH4 plasma that is used to etch InP and its alloys. The new method significantly reduces wafer handling and eliminates the wet resist stripping step. The gratings were imaged with a scanning tunneling microscope.

Paper Details

Date Published: 2 September 1992
PDF: 6 pages
Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137662
Show Author Affiliations
Antoni S. Gozdz, Bell Communications Research (United States)
John A. Shelburne, Bell Communications Research (United States)
Chuan C. Chang, Bell Communications Research (United States)
R. S. Robinson, Bell Communications Research (United States)

Published in SPIE Proceedings Vol. 1676:
Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication

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