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Proceedings Paper

Monte Carlo simulation of a "true" quantum wire
Author(s): Lucio Rota; F. Rossi; Paolo Lugli; Elisa Molinari; Stephen M. Goodnick; Wolfgang Porod
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Paper Abstract

We present a Monte Carlo analysis of a `true' GaAs-based quantum wire, whose dimensions correspond to present state-of-the-art technology. Intrasubband and intersubband scattering rates for the electron-polar optical phonon interaction are included in the simulation as well as electron-electron interaction. We have studied the nonequilibrium transport characteristics of the one-dimensional system in two different situations: the response of the electron gas to an external electric field applied along the wire direction, and the cooling dynamics following laser photoexcitation. With respect to 3-D and 2-D systems, we can show that the electron- phonon interaction is not substantially modified, while a strong reduction in the electron- electron scattering rate of the wire is found.

Paper Details

Date Published: 2 September 1992
PDF: 11 pages
Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137656
Show Author Affiliations
Lucio Rota, Univ. di Modena (Italy)
F. Rossi, Univ. di Modena (Italy)
Paolo Lugli, II Univ. di Roma (Italy)
Elisa Molinari, Instituto di Acustica/CNR (Italy)
Stephen M. Goodnick, Oregon State Univ. (United States)
Wolfgang Porod, Univ. of Notre Dame (United States)

Published in SPIE Proceedings Vol. 1676:
Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
Roger J. Malik; Chris J. Palmstrom; Salah M. Bedair; Harold G. Craighead; Randall L. Kubena, Editor(s)

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