Share Email Print

Proceedings Paper

MBE growth of (GaAs)m/(AlAs)n short-period superlattices and their application in fabricating visible lasers
Author(s): Naresh Chand; Niloy K. Dutta; John Lopata; Robert Hull; Michael Geva
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report on the fabrication and performance characteristics of (GaAs)3/(AlAs)1 short-period superlattices (SPSs) quantum well lasers emitting at 737 nm. The SPSs consists of eight periods of 3 and 1 ML of GaAs and AlAs, respectively. The (GaAs)m/(AlAs)n SPSs have many advantages over their equivalent AlGaAs alloy counterparts. The broad area threshold current density, Jth, for 500 micrometers long lasers is 510 A cm-2. The 500 micrometers -long ridge waveguide lasers have a threshold current of 48 mA with a characteristic temperature of 68 K in the temperature range 19 to 60 degree(s)C. The external differential quantum efficiency near threshold is 0.58 mW/mA/facet. The devices lase in a single mode with spectral width within the resolution limit of the spectrometer.

Paper Details

Date Published: 2 September 1992
PDF: 7 pages
Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137654
Show Author Affiliations
Naresh Chand, AT&T Bell Labs. (United States)
Niloy K. Dutta, AT&T Bell Labs. (United States)
John Lopata, AT&T Bell Labs. (United States)
Robert Hull, AT&T Bell Labs. (United States)
Michael Geva, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1676:
Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
Roger J. Malik; Chris J. Palmstrom; Salah M. Bedair; Harold G. Craighead; Randall L. Kubena, Editor(s)

© SPIE. Terms of Use
Back to Top