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Proceedings Paper

Carbon doping of III-V compounds by atomic-layer epitaxy
Author(s): Kimberly G. Reid; A. F. Myers; J. Ramdani; N. A. El-Masry; Salah M. Bedair
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Paper Abstract

Carbon is a very suitable acceptor in III - V compounds for device applications requiring thin layers with very low resistivity due to its low diffusion coefficient. We have used a modified, atmospheric pressure MOCVD reactor to grow carbon doped GaAs films by atomic layer epitaxy (ALE) using trimethylgallium (TMGa) as the carbon source. The hole density was controllable from high resistivity to 1020 cm-3. These results were then used as the basis for the study of carbon doping of InGaAs in a layer-by-layer technique using TMGa, triethylindium (TEIn) and arsine (AsH3).

Paper Details

Date Published: 2 September 1992
PDF: 6 pages
Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137653
Show Author Affiliations
Kimberly G. Reid, North Carolina State Univ. (United States)
A. F. Myers, North Carolina State Univ. (United States)
J. Ramdani, North Carolina State Univ. (United States)
N. A. El-Masry, North Carolina State Univ. (United States)
Salah M. Bedair, North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 1676:
Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
Roger J. Malik; Chris J. Palmstrom; Salah M. Bedair; Harold G. Craighead; Randall L. Kubena, Editor(s)

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