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Proceedings Paper

Evaluation of the band offsets of GaAs/GaInP multilayers by electroreflectance
Author(s): Manijeh Razeghi; Daniel Yang; James W. Garland; Zhijie Zhang; Dazhong Xue
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Paper Abstract

We report the first band offset measurement of GaAs/Ga0.51In0.49P multiquantum wells and superlattices by electrolyte electroreflectance spectroscopy. The conduction and valence band discontinuities (Delta) Ec equals 159 +/- 4 meV and (Delta) Ev equals 388 +/- 6 meV have been measured. The values found for the conduction band, heavy-hole and light-hole masses in the GaInP barriers and GaAs wells and for the split-off well mass are in excellent agreement with the literature. The intraband, intersubband transition energies, which are important for III - V infrared detection devices, also were directly measured.

Paper Details

Date Published: 2 September 1992
PDF: 9 pages
Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137652
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Daniel Yang, Northwestern Univ. (United States)
James W. Garland, Univ. of Illinois/Chicago (United States)
Zhijie Zhang, Univ. of Illinois/Chicago (United States)
Dazhong Xue, Univ. of Illinois/Chicago (United States)


Published in SPIE Proceedings Vol. 1676:
Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
Roger J. Malik; Chris J. Palmstrom; Salah M. Bedair; Harold G. Craighead; Randall L. Kubena, Editor(s)

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