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Proceedings Paper

Buried heterostucture lasers using a single-step metal-organic chemical vapor deposition growth over patterned substrates
Author(s): John Lopata; Niloy K. Dutta; William S. Hobson; Paul Raymond Berger
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Paper Abstract

A single-step metal organic chemical vapor deposition (MOCVD) growth has been used to fabricate a buried heterostructure InGaAs/GaAs multi-quantum well laser over a patterned GaAs substrate. The pattern used here is a re-entrant mesa formed by wet chemical etching oriented along [011] direction. Growth over the mesa results in isolated buried heterostructures. The 250 micrometers long lasers have threshold currents of 30 mA and emit > 100 mW/facet at room temperature. The external differential quantum efficiency is found to be almost independent of temperature in the temperature range of 10 degree(s)C to 90 degree(s)C which suggests a low temperature dependence of leakage current. The threshold current of the laser as a function of temperature can be represented by the usual expression Ith approximately Io exp(T/To) with a characteristic temperature (To) of about 120 K in the temperature range 10 degree(s)C to 90 degree(s)C.

Paper Details

Date Published: 2 September 1992
PDF: 5 pages
Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137650
Show Author Affiliations
John Lopata, AT&T Bell Labs. (United States)
Niloy K. Dutta, AT&T Bell Labs. (United States)
William S. Hobson, AT&T Bell Labs. (United States)
Paul Raymond Berger, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1676:
Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication

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