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Proceedings Paper

Direct synthesis of III-V semiconductor quantum wires and quantum dots by molecular-beam epitaxy
Author(s): Klaus H. Ploog; Richard Noetzel
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Paper Abstract

The evolution of ordered surface and interface structures on (111), (211), and (311) GaAs during molecular beam epitaxy offers the unique possibility to directly synthesize GaAs quantum wires and quantum dots in an AlAs matrix. We show that well ordered alternating thicker and thinner regions of GaAs and AlAs form symmetric and asymmetric quantum-dot structures on (111) and (211) substrates, respectively, and quantum-wire structures on (311) substrates. The observed optical properties confirm the lateral size quantization in these GaAs/AlAs multilayer structures.

Paper Details

Date Published: 2 September 1992
PDF: 9 pages
Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137645
Show Author Affiliations
Klaus H. Ploog, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Richard Noetzel, Max-Planck-Institut fuer Festkoerperforschung (Germany)

Published in SPIE Proceedings Vol. 1676:
Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
Roger J. Malik; Chris J. Palmstrom; Salah M. Bedair; Harold G. Craighead; Randall L. Kubena, Editor(s)

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