Share Email Print

Proceedings Paper

Electromodulation study of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum-well structure: two-dimensional electron gas effects
Author(s): Yichun Yin; Hao Qiang; Fred H. Pollak; Dwight C. Streit; Michael Wojtowicz
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have studied the electroreflectance and photoreflectance spectra from a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum well (MDQW) structure in the temperature range 79 K < T < 304 K. The features from the InGaAs MDQW can be accounted for on the basis of a two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the two-dimensional electron gas concentration (Ns), as well as other important parameters of the structure. Our value for Ns is in good agreement with a Hall measurement. The effect of photo-injected carriers on Ns also was studied.

Paper Details

Date Published: 3 September 1992
PDF: 12 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137634
Show Author Affiliations
Yichun Yin, CUNY/Brooklyn College (United States)
Hao Qiang, CUNY/Brooklyn College (United States)
Fred H. Pollak, CUNY/Brooklyn College (United States)
Dwight C. Streit, TRW, Inc. (United States)
Michael Wojtowicz, TRW, Inc. (United States)

Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

© SPIE. Terms of Use
Back to Top