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Proceedings Paper

Electromodulation study of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum-well structure: two-dimensional electron gas effects
Author(s): Yichun Yin; Hao Qiang; Fred H. Pollak; Dwight C. Streit; Michael Wojtowicz
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Paper Abstract

We have studied the electroreflectance and photoreflectance spectra from a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum well (MDQW) structure in the temperature range 79 K < T < 304 K. The features from the InGaAs MDQW can be accounted for on the basis of a two-dimensional density of states and a Fermi level filling factor. A detailed lineshape fit makes it possible to evaluate the Fermi energy, and hence the two-dimensional electron gas concentration (Ns), as well as other important parameters of the structure. Our value for Ns is in good agreement with a Hall measurement. The effect of photo-injected carriers on Ns also was studied.

Paper Details

Date Published: 3 September 1992
PDF: 12 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137634
Show Author Affiliations
Yichun Yin, CUNY/Brooklyn College (United States)
Hao Qiang, CUNY/Brooklyn College (United States)
Fred H. Pollak, CUNY/Brooklyn College (United States)
Dwight C. Streit, TRW, Inc. (United States)
Michael Wojtowicz, TRW, Inc. (United States)


Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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