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Proceedings Paper

Effect of electric field, both external and built-in, on GaAs-AlAs structures
Author(s): Mitra B. Dutta; Hongen Shen; Jagadeesh Pamulapati; Peter G. Newman; Michael A. Stroscio
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Paper Abstract

Experimental results on GaAs-AlAs multiple quantum wells where the confined electron level is initially delocalized due to the mixing between the (Gamma) and X levels are presented. The applied electric field reduces this coupling and reconfines the electron in the GaAs layer. This causes an increase in oscillator strength and a blue shift of the heavy hole to (Gamma) - electron transition. Reduction of the charge transfer from narrow wells to a wide well has also been observed.

Paper Details

Date Published: 3 September 1992
PDF: 5 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137618
Show Author Affiliations
Mitra B. Dutta, U.S. Army Electronics Technology and Devices Lab. (United States)
Hongen Shen, U.S. Army Electronics Technology and Devices Lab. (United States)
Jagadeesh Pamulapati, U.S. Army Electronics Technology and Devices Lab. (United States)
Peter G. Newman, U.S. Army Electronics Technology and Devices Lab. (United States)
Michael A. Stroscio, U.S. Army Research Office (United States)


Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV

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