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Proceedings Paper

Strong intersubband absorption by photogenerated carriers in quantum wells
Author(s): Elliott R. Brown; K. Alexander McIntosh; Kirby B. Nichols
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Paper Abstract

Intersubband absorption spectra in the 10-micrometers region are measured between 4.2 and 290 K in four n-type GaAs/Al0.28Ga0.72As multiple-quantum-well samples. The carriers responsible for the absorption are generated by a cross-gap pump laser operating at 0.75 micrometers . The absorption strength per unit pump power is found to depend strongly on the background electron sheet density (sigma) B, and is greatest by far in a sample having (sigma) B approximately equals 4 X 1010 cm-2. By measuring the speed of response, the cause of the strong photoabsorption is found to be a long photoelectron lifetime. The sample with the strongest photoabsorption is used to make an efficient CO2-laser modulator.

Paper Details

Date Published: 3 September 1992
PDF: 11 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137616
Show Author Affiliations
Elliott R. Brown, Lincoln Lab./MIT (United States)
K. Alexander McIntosh, Lincoln Lab./MIT (United States)
Kirby B. Nichols, Lincoln Lab./MIT (United States)

Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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