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Proceedings Paper

Largely enhanced infrared absorption in a wide InAlAs/InGaAs quantum well and short-period superlattice barrier structure
Author(s): Larry S. Yu; Sheng S. Li; Pin Ho
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Paper Abstract

We report here a detailed study of intersubband absorption at 10.7 micrometers between the localized ground state and the global miniband state in an InAlAs/InGaAs multiple quantum well and short-period superlattice (SL) barrier heterostructure. The use of enlarged quantum well and the superlattice reinforced miniband structure has shown a significant enhancement in the net intersubband absorption. An integrated optical absorption strength of IA equals 19.5 Abs-cm-1 was obtained under the Brewster's incident angle at T equals 300 K, which is about five times larger than that of the conventional single bound-to-bound transition in the InAlAs/InGaAs quantum well structure.

Paper Details

Date Published: 3 September 1992
PDF: 5 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137615
Show Author Affiliations
Larry S. Yu, Univ. of Florida (United States)
Sheng S. Li, Univ. of Florida (United States)
Pin Ho, General Electric Co. (United States)

Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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