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Proceedings Paper

Reduction of inelastic longitudinal-optical phonon scattering in narrow polar-semiconductor quantum wells
Author(s): Michael A. Stroscio; Ki Wook Kim; Amit R. Bhatt; Gerald J. Iafrate; Mitra B. Dutta; Harold L. Grubin
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Paper Abstract

In this paper, it is demonstrated that establishing metal-semiconductor interfaces at the heterojunctions of polar semiconductor quantum wells introduces a set of boundary conditions that dramatically reduces or eliminates unwanted carrier energy loss caused by interactions with interface longitudinal-optical (LO) phonon modes.

Paper Details

Date Published: 3 September 1992
PDF: 5 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137613
Show Author Affiliations
Michael A. Stroscio, U.S. Army Research Office (United States)
Ki Wook Kim, North Carolina State Univ. (United States)
Amit R. Bhatt, North Carolina State Univ. (United States)
Gerald J. Iafrate, U.S. Army Research Office (United States)
Mitra B. Dutta, U.S. Army Electronics Technology and Devices Lab. (United States)
Harold L. Grubin, Scientific Research Associates, Inc. (United States)


Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV

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