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Carrier injection into higher subbands by resonant tunneling in superlattices| Format | Member Price | Non-Member Price |
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Paper Abstract
The injection of photoexcited carriers into higher subbands by resonant tunneling in GaAs- AlAs superlattices is directly observed by photoluminescence spectroscopy. For a conduction subband spacing larger than the longitudinal optical phonon energy, the relative occupation of the second subband is much smaller than one. However, if the conduction subband spacing is below the longitudinal optical phonon energy, the relative occupation increases, but so far no intersubband inversion has been detected.
Paper Details
Date Published: 3 September 1992
PDF: 10 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137612
Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
PDF: 10 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137612
Show Author Affiliations
Holger T. Grahn, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Wolfgang W. Ruehle, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Wolfgang W. Ruehle, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Klaus H. Ploog, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Technische Hochschule Darmstadt (Germany)
Technische Hochschule Darmstadt (Germany)
Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
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