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Proceedings Paper

Subband states and optical properties of a strained nonsquare quantum well
Author(s): Joseph Micallef; E. Herbert Li; Kin Sang Chan M.D.; Bernard L. Weiss
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Paper Abstract

An error function is used to model the compositional profile in an undoped InGaAs/GaAs single quantum well after disordering. Calculation of the subband structure, interband transition energies, overlapping wavefunction and polarization dependent interband absorption coefficient are presented for various stages of disordering. It is shown that the combined effects of strain and disordering in quantum well structures can be used to tailor the absorption edge.

Paper Details

Date Published: 3 September 1992
PDF: 10 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137610
Show Author Affiliations
Joseph Micallef, Univ. of Surrey (United Kingdom)
E. Herbert Li, Univ. of Surrey (United Kingdom)
Kin Sang Chan M.D., City Polytechnic of Hong Kong (Hong Kong China)
Bernard L. Weiss, Univ. of Surrey (United Kingdom)

Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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