Single layers of GaAs strained to InP have been grown by reduced pressure metal-organic vapor phase epitaxy. Raman spectroscopy along with cathodoluminescence show that the layers are fully strained and consisting of GaAs. The photoluminescence is strong, allowing detailed hydrostatic pressure experiments to be performed. These structures, which are type II at atmospheric pressure, have been transformed to type I structures at high hydrostatic pressure, where the GaAs layer has an indirect conduction band. This transformation is seen as a change in the pressure derivative of the transition energy and a rapid disappearance of the luminescence intensity. We find that the pressure derivative of the valence band offset is less than 1 meV/kbar.

Date Published: 3 September 1992
PDF: 9 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137608

Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)