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Proceedings Paper

Optical properties of a type-II GaAs/GaP strained-layer superlattice
Author(s): Hai-Ping Zhou; Cliva M. Sotomayor-Torres
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Paper Abstract

We studied the optical properties of a type-II (GaAs)6/(GaP)6 strained layer superlattice grown by Atomic Layer Molecular Beam Epitaxy (ALMBE) on GaAs substrate. The evolution of the photoluminescence peaks as a function of the temperature and excitation power as well as the photoluminescence excitation spectra supported the assignment of the transition involved. For (GaAs)6/(GaP)6, the lowest conduction band is the X level in GaP layers. The energy distance between the X level in GaP layers and the (Gamma) level in GaAs layers is approximately 44 meV. This sample is spatially indirect (type-II) superlattice. We found that the temperature dependence of the photoluminescence spectra is different from other's results.

Paper Details

Date Published: 3 September 1992
PDF: 8 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137607
Show Author Affiliations
Hai-Ping Zhou, Univ. of Glasgow (United Kingdom)
Cliva M. Sotomayor-Torres, Univ. of Glasgow (United Kingdom)


Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV

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