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Proceedings Paper

Cavity-length dependence of quantum-well lasers with different strain
Author(s): Ulf Ohlander; Dana Karlsson-Varga; Bjoern Broberg; Johan Wallin; Gunnar Landgren
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Paper Abstract

Previously, strain has shown to reduce the threshold current density for long cavity semiconductor lasers. However, also important is the cavity length for which the threshold current has a minimum. We find that for a given well width, an increase of the indium ratio from the lattice-matched value substantially reduces this optimum cavity length. We attribute this to the combined effects of strain on the valence bands and an increase in the confinement of the conduction band electrons to the well.

Paper Details

Date Published: 3 September 1992
PDF: 6 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137606
Show Author Affiliations
Ulf Ohlander, Swedish Institute of Microelectronics (Sweden)
Dana Karlsson-Varga, Swedish Institute of Microelectronics (Sweden)
Bjoern Broberg, Swedish Institute of Microelectronics (Sweden)
Johan Wallin, Swedish Institute of Microelectronics (Sweden)
Gunnar Landgren, Swedish Institute of Microelectronics (Sweden)


Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV

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