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Proceedings Paper

Long-wavelength strained-layer quantum-well lasers
Author(s): Chung-En Zah; Rajaram J. Bhat; F. J. Favire; Bhadresh Pathak; Catherine Caneau; Nicholas C. Andreadakis; Paul S. D. Lin; Antoni S. Gozdz; Tien Pei Lee
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Paper Abstract

We have studied the effect of strain on the laser threshold current density in the 1.3 and 1.55 micrometers wavelength regions using both GaInAsP/InP and AlGaInAs/InP material systems. Low threshold current densities have been obtained for both compressive- and tensile-strained quantum well lasers. We have also fabricated 20-wavelength distributed-feedback laser arrays using both compressive- and tensile-strained quantum well active layers. A wide optical gain spectrum and a sub-MHz linewidth have been demonstrated.

Paper Details

Date Published: 3 September 1992
PDF: 8 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137605
Show Author Affiliations
Chung-En Zah, Bell Communications Research (United States)
Rajaram J. Bhat, Bell Communications Research (United States)
F. J. Favire, Bell Communications Research (United States)
Bhadresh Pathak, Bell Communications Research (United States)
Catherine Caneau, Bell Communications Research (United States)
Nicholas C. Andreadakis, Bell Communications Research (United States)
Paul S. D. Lin, Bell Communications Research (United States)
Antoni S. Gozdz, Bell Communications Research (United States)
Tien Pei Lee, Bell Communications Research (United States)


Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV

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