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Proceedings Paper

Tuning of read/write/erase processes in Electron Trapping Optical Memory media
Author(s): Daniel T. Brower; Robert E. Revay
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Paper Abstract

The wavelengths of light used for the Read/Write/Erase processes in Electron Trapping Optical Memory have been shown to be tunable. Simulation and excitation efficiency spectra of nine samples of these IR stimulable phosphors were measured. Tuning was accomplished through compositional modifications of the ETOMTM pseudobinary host lattice. The host lattice systems investigated were CaS, SrS, BaS, SrxCa1-xS, and SrxBa1-xS (0 <EQ X <EQ 1). Shifts in the read wavelength of over 125 nm and in the write wavelength of 5 nm were achieved.

Paper Details

Date Published: 13 August 1992
PDF: 6 pages
Proc. SPIE 1663, Optical Data Storage, (13 August 1992); doi: 10.1117/12.137529
Show Author Affiliations
Daniel T. Brower, Optex Corp. (United States)
Robert E. Revay, Optex Corp. (United States)


Published in SPIE Proceedings Vol. 1663:
Optical Data Storage
Donald B. Carlin; David B. Kay; Alfred A. Franken, Editor(s)

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