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Proceedings Paper

Practical evaluation of 16M-DRAMs production with i-line phase-shift lithography
Author(s): Akihiro Usujima; Ryuji Tazume; Tatsuji Araya; Yoshimi Shioya; Kazumasa Shigematsu
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Paper Abstract

We have fabricated 16M-DRAMs with i-line phase-shift lithography using 8 inch wafers. Edge-contrast enhancement type was used as a phase-shift reticle. The effects on i-line phase- shift lithography were evaluated for the patterns which have a small focus and alignment margin. It was found that the phase-shift lithography has a large effect on enlarging focus margin of small size patterns like 0.5 micrometers . We evaluated the effect of phase-shift lithography by a trial manufacturing of 16M-DRAMs. As a result, i-line phase-shift lithography was found to have a possibility of high yield production of 16M-DRAMs. However, it was also found that there were several rejected pattern widths which were caused by variation of shifter width in the phase-shift reticle. So it is necessary to improve these rejected patterns for the application of this method to 16M-DRAMs.

Paper Details

Date Published: 9 July 1992
PDF: 17 pages
Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136041
Show Author Affiliations
Akihiro Usujima, Fujitsu Ltd. (Japan)
Ryuji Tazume, Kyusyu Fujitsu Electronics Ltd. (Japan)
Tatsuji Araya, Fujitsu Ltd. (Japan)
Yoshimi Shioya, Fujitsu Ltd. (Japan)
Kazumasa Shigematsu, Fujitsu VLSI Ltd. (Japan)


Published in SPIE Proceedings Vol. 1671:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II
Martin C. Peckerar, Editor(s)

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