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Proceedings Paper

Manufacturing implementation of deep-UV lithography for 500-nm devices
Author(s): Steven J. Holmes; Albert S. Bergendahl; Diana D. Dunn; J. Guidry; Mark C. Hakey; Karey L. Holland; Andy Horr; Dean C. Humphrey; Stephen E. Knight; D. Macaluso; Katherine C. Norris; Denis Poley; Paul A. Rabidoux; John L. Sturtevant; Dean Writer
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Paper Abstract

Lithographers have steadily reduced exposure wavelength and increased numerical aperture (NA) to maintain process window and simplicity. The G-line systems of the 1970s gave way to the I-line systems of the late 80s, and then to the deep ultraviolet (DUV) systems of today. This paper describes our characterization of a DUV lithography system for the manufacture of 16-Mb DRAM chips at 500-nm ground rules. The process consists of a positive-tone, aqueous-base developable photoresist with an overcoat for sensitivity control, and an anti- reflective coating (ARC) on selected levels. The exposure tools used are step-and-scan systems with a 0.36 NA and expose bandpass of 240 - 255 nm. Apply and develop processes are clustered with the expose tool to minimize defects, reduce cycle time, and eliminate process variables.

Paper Details

Date Published: 9 July 1992
PDF: 19 pages
Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136040
Show Author Affiliations
Steven J. Holmes, IBM General Technology Div. (United States)
Albert S. Bergendahl, IBM General Technology Div. (United States)
Diana D. Dunn, IBM General Technology Div. (United States)
J. Guidry, IBM General Technology Div. (United States)
Mark C. Hakey, IBM General Technology Div. (United States)
Karey L. Holland, IBM General Technology Div. (United States)
Andy Horr, IBM General Technology Div. (United States)
Dean C. Humphrey, IBM General Technology Div. (United States)
Stephen E. Knight, IBM General Technology Div. (United States)
D. Macaluso, IBM General Technology Div. (United States)
Katherine C. Norris, IBM General Technology Div. (United States)
Denis Poley, IBM General Technology Div. (United States)
Paul A. Rabidoux, IBM General Technology Div. (United States)
John L. Sturtevant, IBM General Technology Div. (United States)
Dean Writer, IBM General Technology Div. (United States)


Published in SPIE Proceedings Vol. 1671:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II
Martin C. Peckerar, Editor(s)

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