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Proceedings Paper

Low-damage anisotropic radical-beam ion-beam etching and selective chemical etching of focused-ion-beam-damaged GaAs substrates
Author(s): Jay A. Skidmore; Guy D. Spiers; John H. English; Zheng Xu; Craig B. Prater; Larry A. Coldren; Evelyn L. Hu; Pierre M. Petroff
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Paper Abstract

We demonstrate the flexibility of radical-beam ion-beam etching for anisotropic low-damage dry etching and in situ processing of GaAs/AlGaAs structures. High anisotropy and low damage are verified by the light-current characteristics of etched laser facets and from Schottky diode characteristics of etched surfaces. These data show that damage is reduced by increasing the ratio of chemical to physical etching components. We also demonstrate direct- write patterning by selective chlorine etching of focused ion beam-damaged GaAs. The depths and linewidths are measured by atomic force microscopy. The enhanced etching is correlated to the implant-damage distribution. A selectivity of 10 to 1 is attained for doses equal or above 5 X 1014 cm-2, which corresponds to the amorphization threshold in GaAs.

Paper Details

Date Published: 9 July 1992
PDF: 12 pages
Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136036
Show Author Affiliations
Jay A. Skidmore, Univ. of California/Santa Barbara (United States)
Guy D. Spiers, Univ. of California/Santa Barbara (United States)
John H. English, Univ. of California/Santa Barbara (United States)
Zheng Xu, Univ. of California/Santa Barbara (United States)
Craig B. Prater, Univ. of California/Santa Barbara (United States)
Larry A. Coldren, Univ. of California/Santa Barbara (United States)
Evelyn L. Hu, Univ. of California/Santa Barbara (United States)
Pierre M. Petroff, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 1671:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II
Martin C. Peckerar, Editor(s)

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