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Proceedings Paper

Focused-ion-beam repair of phase-shift photomasks
Author(s): Lloyd R. Harriott; Joseph G. Garofalo; Robert L. Kostelak
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Paper Abstract

Phase-shift photolithography is emerging as an important new technology for sub-half-micron design rule circuits. Unfortunately part of the price paid for the improvements in spatial resolution and process latitude afforded by phase-shift lithography is increased mask defect printing sensitivity. The minimum printable defect size, 0.3 microns (on the mask) for I-line steppers at 0.35 microns, is roughly half that for conventional photomasks. This paper examines the issues associated with extending high resolution focused ion beam mask repair to phase-shift masks.

Paper Details

Date Published: 9 July 1992
PDF: 10 pages
Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136031
Show Author Affiliations
Lloyd R. Harriott, AT&T Bell Labs. (United States)
Joseph G. Garofalo, AT&T Bell Labs. (United States)
Robert L. Kostelak, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1671:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II
Martin C. Peckerar, Editor(s)

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