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Proceedings Paper

High-resolution Schottky-barrier infrared image sensor
Author(s): Masafumi Kimata; Naoki Yutani; Natsuro Tsubouchi
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Paper Abstract

We have developed a series of Schottky-barrier infrared image sensors with a novel readout architecture called the charge sweep device (CSD). Compared with the conventional interline transfer CCD image sensor, the CSD image sensor has a larger charge handling capacity and is suitable for thermal imaging where we have to detect a small signal in a large background. This paper describes the design and performance of the CSD image sensors. The devices described here include a 512x512 element IRCSD, a small size 256x256 element IRCSD, a 256x256 element IRCSD which has the lowest noise equivalent temperature difference of 0.036K (f/1.2), and a 1040x1040 element IRCSD which is the highest resolution device among infrared image sensors.

Paper Details

Date Published: 12 August 1992
PDF: 12 pages
Proc. SPIE 1656, High-Resolution Sensors and Hybrid Systems, (12 August 1992); doi: 10.1117/12.135900
Show Author Affiliations
Masafumi Kimata, Mitsubishi Electric Corp. (Japan)
Naoki Yutani, Mitsubishi Electric Corp. (Japan)
Natsuro Tsubouchi, Mitsubishi Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 1656:
High-Resolution Sensors and Hybrid Systems
Morley M. Blouke; Winchyi Chang; Laurence J. Thorpe; Rajinder P. Khosla, Editor(s)

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