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Proceedings Paper

Low-noise GaInAsSb/GaAlAsSb SAM avalance photodiode in the 1.6-2.5μm spectral range
Author(s): Maya P. Mikhailova; Igor A. Andreev; Alexej N. Baranov; S. V. Mel'nikov; Yulia P. Smorchkova; Yury P. Yakovlev
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Paper Abstract

GalnAsSb/GaAlAsSb SAM APDs were fabricated and investigated. The GaAlAsSb solid solution of the "resonant" composition (x=0.04, Eg = ?0 ) was used in the multiplication region of the devices. Large ionization rate ratio (?/? =60) and low excess noise factor ( F=Mf f=0.2) was experimentally observed.

Paper Details

Date Published: 1 February 1992
PDF: 7 pages
Proc. SPIE 1580, Fiber Optic Components and Reliability, (1 February 1992); doi: 10.1117/12.135386
Show Author Affiliations
Maya P. Mikhailova, A.F. Ioffe Physical-Technical Institute (Russia)
Igor A. Andreev, A.F. Ioffe Physical-Technical Institute (Russia)
Alexej N. Baranov, A.F. Ioffe Physical-Technical Institute (Russia)
S. V. Mel'nikov, A.F. Ioffe Physical-Technical Institute (Russia)
Yulia P. Smorchkova, A.F. Ioffe Physical-Technical Institute (Russia)
Yury P. Yakovlev, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 1580:
Fiber Optic Components and Reliability

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