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Proceedings Paper

Preparation of quantum dots by the sol-gel process
Author(s): Masayuki Yamane; Toshimi Takada; John D. Mackenzie; Chia-Yen Li
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Paper Abstract

The preparation of semiconductor dots with high number density and narrow particle size distribution, which are essential for high nonlinearity susceptibility, has been studied on CdS dispersed soda-borosilicate glasses by the sol-gel process using tetramethoxysilane (TMOS), triethylborate (B(OEt)3), sodium acetate (NaOAc) and cadmium acetate (Cd(OAc)2) as the starting materials. Both number density and particle size distribution of the CdS crystallites were dependent upon the treatment conditions in the conversion of Cd(OAc)2 to CdO and CdO to CdS inside the porous gel. The optimum heat-treatment temperature for the conversion of Cd(OAc)2 to CdO was around 400 degree(s)C, and that for the conversion of CdO and CdS by exposing the gel to H2S was around 120 degree(s)C. Glass containing about 10 wt% CdS crystallites 4 - 7 nm in diameter was obtained by sintering the gel at 590 degree(s)C under the above treatment conditions.

Paper Details

Date Published: 7 December 1992
PDF: 10 pages
Proc. SPIE 1758, Sol-Gel Optics II, (7 December 1992); doi: 10.1117/12.132050
Show Author Affiliations
Masayuki Yamane, Tokyo Institute of Technology (Japan)
Toshimi Takada, Univ. of California/Los Angeles (United States)
John D. Mackenzie, Univ. of California/Los Angeles (United States)
Chia-Yen Li, Univ. of California/Los Angeles (United States)


Published in SPIE Proceedings Vol. 1758:
Sol-Gel Optics II
John D. Mackenzie, Editor(s)

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