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Proceedings Paper

Optical properties and structural characteristics of semiconductor-doped oxide gels
Author(s): Thierry Gacoin; Cyrille Train; Frederic Chaput; Jean-Pierre Boilot; Pascal Aubert; M. Gandais; Yangshu Wang; Andre Lecomte
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Paper Abstract

CdS and PbS semiconductor nanoclusters (2 - 10 nm) are produced by using direct precipitation, (gamma) -radiolysis and reversed micelles. A chemical capping reaction is made at the cluster surface by thiolate complexes. The structure and the size of the capped clusters are determined by Optical Absorption, X-ray Diffraction, Small Angle X-ray Scattering and High Resolution Electron Microscopy. After grafting of a gel precursor at the cluster surface, PbS and CdS particles can be incorporated in optically clear and dense oxide gels prepared by hydrolysis of metal alkoxides in a wet atmosphere.

Paper Details

Date Published: 7 December 1992
PDF: 12 pages
Proc. SPIE 1758, Sol-Gel Optics II, (7 December 1992); doi: 10.1117/12.132049
Show Author Affiliations
Thierry Gacoin, Ecole Polytechnique (France)
Cyrille Train, Ecole Polytechnique (France)
Frederic Chaput, Ecole Polytechnique (France)
Jean-Pierre Boilot, Ecole Polytechnique (France)
Pascal Aubert, Univ. de Paris VI et Paris VII (France)
M. Gandais, Univ. de Paris VI et Paris VII (France)
Yangshu Wang, Univ. de Paris VI et Paris VII (France)
Andre Lecomte, E.N.S. Ceramique Industrielle (France)

Published in SPIE Proceedings Vol. 1758:
Sol-Gel Optics II
John D. Mackenzie, Editor(s)

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