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Proceedings Paper

Amorphous thin films of ferroelectric oxides
Author(s): Ren Xu; Yuhuan Xu; John D. Mackenzie
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Paper Abstract

Amorphous thin films of ferroelectric LiNbO3 and Pb(Zr0.52Ti0.48)O3 were prepared on a variety of substrates. Their properties were characterized in comparison with typical ferroelectric crystal behavior. It was found that these amorphous thin films show ferroelectric-like behaviors well before being crystallized. These findings suggest possible practical applications in areas where ferroelectric crystals are routinely in use. A structural model is proposed to account for the ferroelectric-like behaviors in the amorphous phases.

Paper Details

Date Published: 7 December 1992
PDF: 13 pages
Proc. SPIE 1758, Sol-Gel Optics II, (7 December 1992); doi: 10.1117/12.132020
Show Author Affiliations
Ren Xu, Univ. of California/Los Angeles (United States)
Yuhuan Xu, Univ. of California/Los Angeles (United States)
John D. Mackenzie, Univ. of California/Los Angeles (United States)


Published in SPIE Proceedings Vol. 1758:
Sol-Gel Optics II
John D. Mackenzie, Editor(s)

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