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Proceedings Paper

Photoacoustic imaging of semiconductor structures
Author(s): Jerzy Bodzenta; Barbara M. Pustelny; Zygmunt Kleszczewski
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Paper Abstract

In the report an experimental apparatus for photoacoustic imaging is described. Results of testing measurements and investigation of ion-implanted silicon wafer were presented. Obtained results show possibilities of photoacoustic imaging of ion-implanted regions in semiconductors with good resolution. Strong dependence of the resolution on frequency was demonstrated.

Paper Details

Date Published: 25 November 1992
PDF: 9 pages
Proc. SPIE 1844, Acousto-Optics and Applications, (25 November 1992); doi: 10.1117/12.131925
Show Author Affiliations
Jerzy Bodzenta, Silesian Technical Univ. (Poland)
Barbara M. Pustelny, Silesian Technical Univ. (Poland)
Zygmunt Kleszczewski, Silesian Technical Univ. (Poland)

Published in SPIE Proceedings Vol. 1844:
Acousto-Optics and Applications

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