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Proceedings Paper

Infrared introscopy and microtomography of semiconductor structures
Author(s): Leonid Aksenov; Vitaly V. Aristov; Konstantin Frolov; Edward I. Rau
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Paper Abstract

Some new physical and technical solutions applied to the development of laser diagnostic complex for the study of local electro-physical and structural characteristics of semiconductor materials and microelectronic devices are presented. The potentialities of introscopy and microtomography in laser scanning microscope when detecting different informative response signals are discussed. Original methods and operation modes for scanning microscopy and tomography of semiconductor crystals are described, in particular, the results of computer and apparatus microtomography using transmitted, scattered, polarized infrared radiation, and optically induced photocurrent.

Paper Details

Date Published: 3 November 1992
PDF: 13 pages
Proc. SPIE 1843, Analytical Methods for Optical Tomography, (3 November 1992); doi: 10.1117/12.131902
Show Author Affiliations
Leonid Aksenov, Institute of Microelectronics Technology and High-Purity Materials (Russia)
Vitaly V. Aristov, Institute of Microelectronics Technology and High-Purity Materials (Russia)
Konstantin Frolov, Institute of Microelectronics Technology and High-Purity Materials (Russia)
Edward I. Rau, Institute of Microelectronics Technology and High-Purity Materials (Russia)


Published in SPIE Proceedings Vol. 1843:
Analytical Methods for Optical Tomography

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