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Proceedings Paper

Reversible threshold bleaching in GaAs crystals under irradiation by a picosecond light pulse having photon energy close to bandgap
Author(s): N. N. Ageeva; I. L. Bronevoi; S. E. Kumekov; V. A. Mironov; V. I. Perel
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Paper Abstract

Interband absorption of a short pulse of light leads to the reversible bleaching of a sample within picosecond time range. After the pulse at times less than that of spontaneous recombination, a plasma state depends neither on the pulse energy nor on the energy of exciting photons. Radiation has been observed that correlates with excitation at picosecond times. Mechanisms of the phenomena have been studied. The paper describes an investigation of alterations in optical transparency of thin epitaxial layers of GaAs due to irradiation by a powerful pulse of light having a picosecond duration and the photon energy $HBAR(omega) ex close to the band gap Eg. The paper deals with those experiments as well as a set of experiments intended for clarifying the nature of the observed phenomena.

Paper Details

Date Published: 30 November 1992
PDF: 13 pages
Proc. SPIE 1842, Mode-Locked Lasers and Ultrafast Phenomena, (30 November 1992); doi: 10.1117/12.131858
Show Author Affiliations
N. N. Ageeva, Institute of Radioengineering and Electronics (Russia)
I. L. Bronevoi, Institute of Radioengineering and Electronics (Russia)
S. E. Kumekov, Technology Institute (Kazakhstan)
V. A. Mironov, Institute of Radioengineering and Electronics (Russia)
V. I. Perel, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 1842:
Mode-Locked Lasers and Ultrafast Phenomena
Gregory B. Altshuler, Editor(s)

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